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Home > Briefs > Technology > Prosecutors Indict Former Samsung Executive and Others for Leaking ‘K-Semiconductor’ Technology to China’s CXMT

Prosecutors Indict Former Samsung Executive and Others for Leaking ‘K-Semiconductor’ Technology to China’s CXMT

The prosecution has uncovered the full extent of a case involving the leak of Samsung Electronics’ state-designated core technology for 10-nanometer-class DRAM, which was developed for the first time in the world by Samsung. The investigation revealed that ChangXin Memory Technologies (CXMT), China’s first DRAM semiconductor company, illicitly obtained and used Samsung’s core technology, ultimately succeeding in mass production. The technology in question is the latest 10-nanometer-class DRAM process technology, which Samsung developed first in the world with an investment of 1.6 trillion won. The Information Technology Crime Investigation Department of the Seoul Central District Prosecutors’ Office (headed by Prosecutor Kim Yunyong) announced on December 23 that it had indicted and detained five key development personnel, including Mr. A, a former Samsung Electronics executive who oversaw development at CXMT, on charges of violating the Act on Prevention of Divulgence and Protection of Industrial Technology (leakage of state-designated core technology abroad, etc.).

Full report : South Korean prosecutors allege China’s CXMT mass-produced 10nm-class DRAM using leaked Samsung tech, indicting 10 employees who previously worked for Samsung.