Samsung will use Taiwan Semiconductor’s 3-nanometre process to build the base dies for Nvidia’s next-generation custom high-bandwidth memory chips, the Seoul Economic Daily reported on Sunday. The move would be the first time Samsung has worked with the Taiwanese contract chipmaker at the high-bandwidth memory manufacturing stage. Nvidia, which unveiled the new memory standard in August, has asked Samsung, SK Hynix, and Micron to use TSMC’s process for the base dies and sixth-generation DRAM technology for the core dies. Samsung accepted the requirements after an internal review but plans to keep its in-house production model for standard memory and custom products for other customers. The company is also considering whether its own foundry could make the base dies if demand exceeds TSMC’s capacity.

Full report: Samsung to use TSMC technology for Nvidia’s next-generation memory chips, Seoul newspaper reports.